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PD -93910B
IRLBD59N04E
HEXFET(R) Power MOSFET
Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fully Avalanche Rated Zener Gate Protected Description
The IRLBD59N04E is a 40V, N-channel HEXFET(R) power MOSFET with gate protection provided by integrated back to back zener diodes. Temperature sensing is given by the change in forward voltage drop of two antiparallel electrically isolated poly-silicon diodes. The IRLBD59N04E provides cost effective temperature sensing for system protection along with the quality and ruggedness you expect from a HEXFET power MOSFET.
VDSS = 40V RDS(on) = 0.018 ID = 59A
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt IG VESD TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt VGS Clamp Current Electrostatic Votage Rating Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
5 Lead-D2Pak
Max.
59 41 230 130 0.89 10 340 35 13 3.6 50 2.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns mA kV C C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
--- ---
Max.
1.12 40
Units
C/W
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IRLBD59N04E
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Clamp Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) VGS gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. 40 --- --- --- 1.0 10 29 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.044 --- --- --- --- --- --- --- --- --- --- --- --- 7.8 84 33 67
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.018 VGS = 10V, ID = 35A 0.021 VGS = 5.0V, ID = 30A 2.0 V VDS = V GS, ID = 250A 20 V IGSS = 20A --- S VDS = 25V, ID = 35A 25 VDS = 40V, VGS = 0V A 250 VDS = 32V, VGS = 0V, TJ = 150C 1.0 VGS = 5.0V A -1.0 VGS = -5.0V 50 ID = 35A 13 nC VDS = 32V 18 VGS = 5.0V, See Fig. 6 and 13 --- VDD = 20V --- ID = 35A ns --- RG = 5.1, --- VGS = 5.0V, See Fig.10 Between lead, 2.0 --- 6mm (0.25in.) nH G from package 5.0 --- and center of die contact 2190 --- VGS = 0V 670 --- VDS = 25V 130 --- pF = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Q rr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 59 showing the A G integral reverse --- --- 230 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 35A, VGS = 0V --- 57 86 ns TJ = 25C, IF = 35A --- 84 130 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Sense Diode Rating
VFM
VF/TJ
Parameter Sense Diode Maximum Voltage Drop Sense Diode Temperature Coefficient
Min. Typ. Max. Units Conditions 675 --- 725 mV IF = 250A, TJ = 25C -1.30 -1.40 -1.58 mV/C IF = 250A, (TJ = 25C and 160C)
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IRLBD59N04E
1000
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
1000
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
10
2.7V
2.7V
10
1 0.1 1
300s PULSE WIDTH T J = 25C
10 100
1 0.1 1
300s PULSE WIDTH T J = 175C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
T J = 25C
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current ()
ID = 59A VGS = 10V
2.0
100
(Normalized)
T J = 175C
1.5
1.0
10 2.0 4.0
VDS = 15V 300s PULSE WIDTH
6.0 8.0 10.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRLBD59N04E
100000 VGS = 0V, f = 1 MHZ C iss = C gs + Cgd , SHORTED Crss = C gd Coss = Cds + Cgd
6.0
C ds
ID= 35A
VGS, Gate-to-Source Voltage (V)
5.0 4.0 3.0 2.0 1.0
VDS= 32V VDS= 20V VDS= 8.0V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100 1 10 100
FOR TEST CIRCUIT SEE FIGURE 13
0.0 0 10 20 30 40 Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000.0
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
100.0 T J = 175C 10.0 T J = 25C 1.0
ID, Drain-to-Source Current (A)
100 100sec
10 Tc = 25C Tj = 175C Single Pulse 1 1 10
1msec
10msec
VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VSD, Source-toDrain Voltage (V)
100
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRLBD59N04E
60 LIMITED BY PACKAGE 50
ID , Drain Current (A)
VDS VGS RG
RD
D.U.T.
+
40 30 20 10
VDS
-VDD
VGS
Pulse Width 1 s Duty Factor 0.1 %
0 25 50 75 100 125 150 175 T C , Case Temperature (C)
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
10
(Z thJC )
1 D = 0.50
Thermal Response
0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 t1/ t 2 +T C 0.1 P DM t1 t2
J = P DM x Z thJC
0.01
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLBD59N04E
15V
800
ID TOP 14A 25A 35A
RG
20V
D.U.T
IAS tp
+ V - DD
A
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
DRIVER
600
BOTTOM
400
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
200
0 25 50 75 100 125 150 175
Starting TJ, Junction Temperature (C)
I AS
Fig 12b. Unclamped Inductive Waveforms
QG QGS VG QGD
Sense Diode Voltage Drop (V)
0.8
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
0.7
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
0.6
IF = 250A
0.5
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
0.4 0 25 50 75 100 125 150 175
T J , Temperature ( C )
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 14. Sense Diode Voltage Drop Vs.Temperature
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IRLBD59N04E
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
+ +
-
RG VGS
* dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 15. For N-channel HEXFET(R) power MOSFETs
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IRLBD59N04E
Case Outline 5 Lead-D2Pak (SMD-220)
PIN ASSIGNMENTS 1 2 3 4 5 - G - GATE - T1 - ANODE - D - DRAIN - T2 - CATHODE - S - SOURCE
Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 0.55mH RG = 25, I AS = 35A. (See Figure 12) ISD 35A, di/dt 150A/s, VDD V(BR)DSS, TJ 175C ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended soldering techniques refer to application note #AN-994. Pulse width 400s; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 39A C = 100pF, R = 1.5k
Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/01
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